ANTARES® System Auto Dewar Drain Upgrade Saves Time and Labor

OTS (February 2009) -- An Auto Dewar Drain upgrade now available for ANTARES® Cryokinetic Cleaning Systems automatically drains liquid nitrogen from the dewar as required during scheduled maintenance or to clear blockages caused by material freezing in the coil or nozzle during routine operations. Automation simplifies the procedure by eliminating the need to manually change hardware, saves time otherwise required to verify draining, and improves reliability by providing positive confirmation that the dewar and coil have reached a temperature high enough to melt and clear any blocking material.

In the ANTARES® system, process gases flow from the gas panel through a coil, immersed in liquid nitrogen (LN2) within an insulated reservoir (dewar), where the gases are cooled to a temperature near their dew points. The dewar must be drained any time the process chamber is opened for maintenance to prevent moisture in the air from freezing on the coil and nozzle. This occurs at least once a quarter during preventive maintenance when the gas lines are checked for leaks. The dewar must also be drained any time the gas lines must be warmed to clear blockages formed from material condensed and frozen out of the process gases - a condition usually indicated by a rise in upstream gas pressure.

In the manual procedure, nitrogen gas inlet and liquid nitrogen outlet lines are connected to the dewar so it may be drained. Then the dewar must be allowed to warm for a sufficient period of time for the coil to reach room temperature so that any blockage will melt and evaporate. If the coil has not been allowed to warm for a long enough time, until it reaches room temperature, the entire procedure would need to be repeated after the dewar has been re-filled. The automated procedure eliminates the need for adding/removing the inlet and drain lines. In addition, a thermocouple monitors the temperature of the coil itself to provide positive confirmation that the coil has reached room temperature, indicating both that the LN2 has drained completely and any blockages have melted.

The Auto Dewar Drain upgrade simplifies maintenance and repair procedures by eliminating most of the associated hardware manipulation. Its ability to monitor coil temperature directly allows the length of the required warming period to be precisely determined, eliminating time that might otherwise be wasted in waiting through an extended warming cycle after the blockage has melted and evaporated. Equally important, it reduces the risk that the blockage is not completely melted or that residual liquid may freeze again when the dewar is refilled, requiring yet another draining and warming cycle. Finally, the automated procedure reduces personal safety risks associated with handling LN2.

For more information contact your local FSI service office toll free at 1(877)723-8324 or call 1(952)361-8188 or click here.

 

Benefits

  • The ANTARES® system removes particles from chemically-sensitive layers and addresses processing challenges:
    • Prevention of metal attack and corrosion when cleaning after via etch in Cu/low-k integration
    • Avoidance of chemical attack when cleaning after Ta/TaN or Ti/TiN barrier deposition
    • Elimination of water absorption by low-k films during cleaning
    • Removal of surface flakes from in-line eletrical probe test
    • Avoidance of chemical attack when cleaning after W CMP or W metal gate etch
  • Higher particle removal efficiency on hydrophobic surfaces. Tunable for sensitive structures where chemicals and/or megasonic energy cannot be applied.
    • Spacer silicon nitride
    • Silicon nitride DT hard mask

News

    Chartered Semiconductor Describes BEOL Applications of ANTARES® System Cryokinetic Aerosol Cleaning Process

    OTS (July 2007) -- At the April FSI Knowledge Services Seminar™ Series in Singapore and Shanghai, China, Ms. Ling Tze Tan of Chartered Semiconductor Manufacturing described applications of the ANTARES® cryokinetic aerosol cleaning tool in 90nm BEOL production. Her presentation focused on cleaning after via etch and after dielectric film deposition reflecting a growing widespread concern in the industry about the potential for water and chemical damage to copper and porous dielectrics.

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    FSI ANTARES® New Cryokinetic Cleaning System Handler Improves Throughput and Reduces Backside Particles

    OTS (February 2008) -- New Edge Contact End Effectors (ECEE) and an Edge Grip Chuck (EGC) substantially reduce backside particulate contamination and improve the throughput of FSI’s ANTARES® cryokinetic cleaning systems. The ITRS Surface Preparation Roadmap has identified backside particle control as a critical issue for IC manufacturing. Currently, the ITRS is projecting the need for less than 200 backside particles larger than 0.16 microns, decreasing to a particle size of 0.14 microns for future generations.

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    Apprecia Technology’s Kenichi Itoi receives award for FSI Advanced Cu/Low-K Cleaning Paper at SEMICON Japan 2007

    OTS (Febrauary 2008) -- SEMI announced that Apprecia Technology’s Kenichi Itoi, business coordinator for FSI International products, received the STS (SEMI Technology Symposium) 2007 award for presenting the paper “Cryogenic Aerosol Technology for Advanced Cu/Low-k Cleaning" during SEMICON Japan 2007.

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    FSI Collaborates With Customer to Drive Down Nitride Spacer and Silicide Defectivity

    OTS (February 2007) -- FSI recently collaborated with a key customer to evaluate the ability of the ANTARES® system AspectClean™ to remove process defects without damaging sensitive gate structures in advanced technology manufacturing processes (90nm and 65nm).

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    AMD Presents Results of Aerosol Cleaning Evaluation at October FSI EMEA Knowledge Services™ Seminar

    OTS (Novemeber 2006) -- AMD’s Fab 36 presented the results of their evaluation of FSI’s ANTARES® aerosol cleaning process used to recover yield after electrical in-line testing. The results demonstrated the process’s ability to remove nearly all debris generated by testing, allowing engineers to return tested wafers to production.

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    ANTARES® CryoKinetic Cleaning System Avoids Copper Pitting in Via Formation Process

    OTS (July 2006) -- FSI’s ANTARES® CryoKinetic cleaning system uses a high-velocity argon/nitrogen cryogenic aerosol to remove surface particles and other residue. Customers have reported using the technique at many points throughout both FEOL and BEOL processes.

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    Recover Lost Yield and Revenue Using CryoKinetic Cleaning After DC Parametric Testing

    OTS (February 2006) -- The in-line DC parametric test step provides an intra-flow device measurement (typically at the first metal level) of the chip's vital parametric performance. As BEOL metallization steps become more complex and manufacturing costs rise, testing becomes even more important.

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Publications

“Yield Improvement Using Cryogenic Aerosol for BEOL Defect Removal”

By: Jeffrey M. Lauerhaas and Yav San Kok, FSI International; and Ameer Hamzah and Ling Tze Tan, Chartered Semiconductor Manfacturing Ltd.

A dry, cryogenic aerosol has been integrated into an advanced copper low k dielectric process flow for defect removal. The cryogenic aerosol is able to remove particulate defects from the exposed substrate materials without etching, charging or altering the conducting or insulating properties of the exposed materials.

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“Preparation, Characterization, and Damage-free Processing of Advanced Multiple-Gate FETs”

By: Jeffrey M. Lauerhaas, FSI International, Rinn Cleavelin and Weize Xiong, Texas Instruments, Koki Mochizuki, Kara Sherman, Hucheng Lee and Brian Clappin, KLA-Tencor and Thomas Schulz, Klaus Schruefer, Infineon Technologies

Advanced transistor structures, such as the Multiple-Gate FET (MuGFET), offer improved shortchannel effects control compared to the bulk-Si MOSFET [1]. Hence they may be adopted in CMOS technology as early as the 32nm technology generation [2]. MuGFET current conduction is on the sidewalls of silicon fins.

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“45nm Node Wafer Cleaning Techniques For Meeting the Challenges of Advanced Semiconductor Manufacturing”

By: Jeffery Butterbaugh, FSI International and Charles Gould, Entegris

On December 13, 2005, the most recent version of International Technology Roadmap for Semiconductors (ITRS) was introduced during a public conference in Seoul, Korea. From the presentations regarding semiconductor design and manufacturing, it is certain that the future of semiconductor manufacturing will continue to present significant challenges for both front-end-of-line (FEOL) and back-end-of-line (BEOL) surface preparation and critical cleaning steps.

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“Cryogenic Aerosol for Zero-Damage Cleaning”

By: Jeffrey Lauerhaas and Carlos Morote, FSI International, and Jean-Phillippe Plé, Altis

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“Advanced Cryogenic Aerosol Cleaning: Application to Damage Free Cleaning of Sensitive Structured Wafers”

By: Jeffery M. Lauerhaas, James F. Weygand and Greg P. Thomes

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“Non-Damaging Particle Removal Using Cryogenic Aerosols”

By: Thomas J. Wagener, James F. Weygand and Greg P. Thomes

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“Particle Removal Challenges and Solutions for the Nano-Technology Era”

By: Thomas J. Wagener and Jeffery W. Butterbaugh

As the particle removal from wafer surfaces becomes more difficult at more advanced technology nodes, cryogenic aerosols are being adopted by an increasing number of IC makers. We elaborate on four aspects of the cryogenic aerosol process that are behind this trend – The does not alter the properties of exposed materials, is compatible with fragile structures, offers superior particle removal efficiency especially on hydrophobic surfaces, and has demonstrated increased final yields in production at 180nm and 130nm.

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“Improved Yields for the Nano-Technology Era Using Cryogenic Aerosols"

By: Thomas J. Wagener (FSI) and Kazushi Kawaguchi (Fujitsu)
This paper describes field usage of cryogenic aerosol processing on 180nm and 130nm devices. Significant advantages of this particle removal technology is demonstrated and discussed.

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"FSI Applications Note (1211-ANS-0403)"

The CryoKinetic technology provides a unique method for particle removal — all-dry, non-reactive, and brushless, customers find applications in many insertion points.

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“Using a Cryogenic Aerosol Process to Clean Copper, Low-k Materials Without Damage"

Cryogenic aerosol of argon and nitrogen has been shown effective at particle removal and yield enhancement for interconnect fabrication. Cryogenic aerosol is particularly useful with copper and low-k dielectrics because it achieves efficient particle removal while avoiding many of the problems of traditional liquid chemical cleans. The cleaning efficiency of cryogenic aerosol has been demonstrated on polished surfaces and surfaces with open vias while having no effect on low-k films. Low-k, very low-k, and ultra low-k (porous) films have been investigated using FTIR and ellipsometry.

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“Enhancing Yield Through Argon/Nitrogen Cryokinetic Aerosol Cleaning After Via Processing”

By: Jeffery W. Butterbaugh, Steve Loper and Greg Thomes, FSI International; and Dale Sheu, Texas Instruments, published in MICRO, June 1999

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Applications

  • Defect Removal