Throughout the wafer fabrication sequence there are many points where particulate contamination must be removed from the wafer surface to ensure high yields. Some of these points include post-shallow trench etch, post-spacer etch, pre-nitride deposition, post-nitride deposition, post-Cu CMP, post-electrical probe, post-low-k via etch, and post-Cu barrier deposition. In most cases, the materials on the surface are sensitive to liquids and chemicals and require a non-etching, energetic process to achieve particle removal. Particle removal must be accomplished without causing damage to patterned structures on the wafer surface.
- FSI has both liquid and cryogenic aerosol technologies that are tunable for maximizing removal efficiencies while avoiding structural damage.
- FSI's ANTARES™ cryogenic aerosol technology is unique in that it will not etch films or alter their properties.