FEOL Critical Clean and Etch prepares the semiconductor wafer prior to film deposition-growth and before high-temperature operations, such as anneal and diffusion. These pre-clean steps must create ultra-clean surfaces with the ideal surface termination to produce high quality, defect-free films and contamination-free active areas.
Benefits
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- Effectively excludes oxygen to control metal etching, eliminate galvanic corrosion and prevent watermark formation
- ViPR™ all-wet photoresist stripping technology strips the most implant levels while meeting 32 and 22nm material loss requirements.
