FEOL All-Wet Resist Strip and Clean processes include removing photoresist films or ashing residues after ion implantation and dry etch operations. These processes must completely remove patterned photoresist films or ash residues while minimizing the loss of device materials.
Benefits
-
- FSI's revolutionary ViPR™ resist strip process is equally effective at removing either photoresist or its ash residues.
- FSI's ViPR™ resist strip process can eliminate ashing for 80% of the implantation masks, resulting in significant reductions in material loss, cycle time and capital investment.
