OTS (February 2009) -- On November 3, 2008, FSI officially entered the single wafer wet cleaning market with the ORION^® System. In recent years IC manufacturers have been asking FSI for single wafer cleaning solutions -- FSI responded with the ORION^® system. The ORION^® system with its differentiated solutions is already providing unique critical path capabilities required for advanced technology nodes as reflected by orders received shortly after its launch.

ORION^® Single Wafer Cleaning System

The initial order came from a major semiconductor manufacturer for an ORION^® system to be used in the development and pilot production of 32nm BEOL copper/low-k processes. Motivated by the excellent performance of the first tool, the customer placed a follow-on order for additional manufacturing capacity; validating the ORION^® tool for volume manufacturing.

Even in an industry downturn, customers are willing to invest in technologies that deliver superior benefits. The new ORION^® platform addresses IC manufacturers’ needs with its innovative closed-chamber design and ability to solve critical path cleaning challenges for next-generation ICs:

• Limiting material loss during photoresist stripping after high dose ion implants
• Removing unreacted metal without damaging the silicide or strain engineered SiGe structures on NiPt salicide processes
• Avoiding metal loss and galvanic corrosion in BEOL copper/low k processes with metal-containing capping layers

Its unique closed chamber design permits the use of volatile, highly-reactive chemistries like the FSI ViPR™ technology for single-step, all-wet stripping of the highly implanted photoresist. By eliminating the ashing step typically used in these processes, the ORION^® system not only reduces material loss by a factor of ten, but also reduces the cycle time, process complexity and the number of tools and process steps. The closed chamber also allows effective elimination of the oxygen in the wafer environment that is responsible for material loss and corrosion in high-k metal gates and new copper interconnects with cobalt and other metals in the capping layers.

ORION^® Single Wafer Cleaning System Chamber

FSI has also recently demonstrated the efficacy of high temperature SPM cleaning in the ORION^® system for NiPt salicide processes where it avoids the damage to low temperature annealed silicides and SiGe strain structures that occur with hydrochloric acid chemistries.

The ORION^® system’s three-dimensional cluster configuration delivers high throughput and great flexibility in wafer handling. Its footprint is 25% to 50% smaller than competing products. The system incorporates many of FSI’s proven core technologies: in-line chemical blending and control; energetic aerosol chemical and water delivery; and flexible, recipe-driven procedures, to deliver uncompromised process performance. Its modular design accommodates multiple chamber types and permits the addition of modules to increase maximum throughput.

ORION^® Single Wafer Cleaning System

FSI now has a superior single wafer solution to tackle IC manufacturers cleaning needs as they adopt more single wafer applications. Customer interest for this product remains high with continued inquiries and requests for laboratory demonstrations.More information about the ORION^® single wafer cleaning system is available on the FSI website or for a specific request, click here.