The ORION® system enables critical path cleaning capabilities for ultra shallow junctions, high-k metal gates and Cu/low-k metal capping layers at 32nm and below. The ORION® system’s ViPR™ technology can strip more photoresist implant levels than competing single wafer wet cleaning products while meeting the material loss requirements for 32nm and 22nm devices. ViPR™ technology also enables the implementation of low temperature nickel platinum silicidation of silicon germanium. In addition, the system’s O2 control with energized spray bar chemical delivery provides high contamination removal efficiency while controlling metal etching and galvanic corrosion for MOL and BEOL cleans.