ORION® enables critical path cleaning capabilities for ultra shallow junctions, high-k metal gates and Cu/low-k interconnect layers at 32nm and below. The system features a series of unique technologies that offer decisive performance advantages in processing applications. The patented ViPR™ technology effectively strips photoresist implant levels while preserving device materials. ORION’s closed chamber design with integrated spray bar safely contains process chemicals and offers complete oxygen control to prevent material corrosion. The space-efficient system is available as 4 or 8 chamber platform.
Benefits
-
ViPR™ Technology
- This all-wet photoresist strip technology strips the most implant levels while meeting 32 and 22nm material loss requirements
- Achieves a 80% reduction in time and cost for stripping of arsenic-implanted photoresist
- Salicide strip enables higher Pt concentrations with SiGe compatibility
-
Closed chamber design
- Controls oxygen levels in both fluids and chamber
- Eliminates galvanic corrosion across entire water surface
- Prevents watermark formation and controls metal etching
-
Integrated spray bar
- Enables steam-energized uniform dispense of high-temperature chemistry
- Offers superior defectivity without pattern damage
- Increases particle removal efficiency
- Improves etch uniformity
- Lowers chemical and water usage
