Silicide Metal Strip processes form the contacts to the transistor after implantation, before metallization layers are added. This includes selective removal of unreacted metallic films, such as Co, Ni or NiPt, after the formation of self-aligned silicide on the source, drain and polysilicon gate regions, as well as nitride spacer removal for optimization of strain enhancement and post contact-etch cleaning.
- FSI's ViPR™ technology is proven to be the most effective process for selectively removing metal films from various dielectric surfaces.
- FSI's ViPR™ metal strip process enables the implementation of low temperature annealed NiPt salicide.
- FSI spray cleaning systems can be configured with both ViPR™ technology and the cleaning chemistries required for contact cleaning.
- FSI spray cleaning systems can be configured for both the metal strip and contact to minimize IC 'manufacturers' capital investments.