OTS (September 2008) -- FSI co-authors paper at the 17th International Conference on Ion Implantation Technology (IIT 2008) in Monterey, California, June 8-13, 2008

The International Conference on Ion Implantation Technology is held every two years at different locations around the world. This Conference Series is the premier world meeting for the presentation of the latest advances in all aspects of ion implantation. The Conference consists of invited presentations as well as selected contributed presentations and posters.

At the 2008 meeting, held during the week of June 8th, FSI co-authored a paper which was presented during the first poster session:

“Key Technologies for Ultra High Dose CMOS Applications,” was co-authored by Hynix Semiconductor, Varian Semiconductor Equipment Associates, FSI, and Nanometrics. The poster was presented by Vikram Singh of Varian and Jeffery Butterbaugh of FSI. This paper describes the integration of plasma immersion ion implantation into DRAM manufacturing for dual-doped polysilicon gate. Key to this integration is the ability of the FSI ZETA^® System with ViPR™ Technology to completely remove the implanted photoresist mask with an all-wet process while minimizing dopant loss.

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