Find the Right Solution

		FEOL Critical Clean & Etch
Products	Wafer Size (mm)	Applications
ORION® Single Wafer Cleaning System	300
ANTARES® Single Wafer Cryokinetic System	200/ 300
ZETA® Batch Spray System	200/ 300
ZETA® Semi-Auto Batch Spray System	≤200
MERCURY® Semi-Auto Batch Spray System	≤200
MAGELLAN® Batch Immersion System	200/ 300
POLARIS® Micro Lithography Cluster	N/A

Applications

Products

News & Events

FSI Presents Papers on Yield Improvement Using Cryogenic Aerosol for BEOL Defect Removal and Wet Resist Strip Capability vs. Implant Energy at ECS

OTS (February 2008) -- FSI presented at the 10th International Symposium on Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing at the October 2007, Electrochemical Society Meeting in Washington, D.C.

The International Symposium on Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing occurs every two years at the fall meeting of the Electrochemical Society and affords participants an opportunity to increase their knowledge and understanding of cleaning and surface conditioning technologies in all phases of IC-production. The symposium consists of invited presentations as well as selected contributed presentations.

At the 2007 meeting, FSI presented two papers:

“Yield Improvement Using Cryogenic Aerosol for BEOL Defect Removal” was presented by Jeffery Butterbaugh, FSI chief technologist. This paper, co-authored with Chartered Semiconductor, describes integration of the FSI ANTARES^® cryokinetic cleaning system into an advanced copper low-k dielectric process flow for defect removal and measured yield improvement. The cryogenic aerosol is able to remove particulate defects from the exposed substrate materials without etching, charging or altering the conducting or insulating properties of the exposed materials. Three BEOL particle removal applications are described in this paper: via etch, film deposition, and in-line electrical probe.

“Wet Resist Strip Capability vs. Implant Energy” was presented by Kurt Christenson, FSI senior member technical staff. This paper investigates the relationship between ion implantation conditions and the ability to remove photoresist exposed to the ion implantation. This work uses the SRIM (Stopping Range of Ions in Matter) computer simulation to investigate the characteristics of the photoresist surface crust layer for a range of implant conditions including dose, energy and implant species. Techniques to prevent the formation of attached crust near the edge bead region of the wafer were also discussed.

If you would like more information on either of these topics, please click here.