OTS (February 2008) -- “Batch Spray processing for Superior Photoresist Stripping and Film Removal process” was presented at the August 2007 SI China Wafer Cleaning Seminar in Shanghai, China, by James Chu, FSI field application engineering manager for SE Asia and Great China; and at the September 2007, 6th Korean Surface Cleaning Users Group meeting in Seoul, Korea, by Andy Lee, FSI spray applications section manager.

These presentations focused on how batch spray processing has demonstrated superior performance for photoresist stripping and other film removal applications for 65nm and below technology generations. As a result of successful joint development projects, the FSI ZETA^® system is qualified and in production for stripping photoresist following high-dosage plasma immersion implantation and also for stripping Ni and NiPt films after salicide formation.

Polysilicon loss is reduced by 50% and dopant loss is reduced by 40% after high dose plasma immersion implantation using the FSI ZETA^® spray cleaning system’s ViPR™ single-step all-wet process, instead of a standard three-step wet+ash+wet process. In addition, for salicide formation, excellent residue removal and superior electrical results are achieved using the FSI ZETA^® System with efficient fresh chemical dispense.

ViPR™ technology is available on the FSI ZETA^® spray cleaning system and has been installed in several major IC production sites for more than a year. For more information on the FSI’s ViPR™ technology, please click here.