During the SI China Wafer Cleaning Seminar in Shanghai, China on August 10, FSI International introduced its new ViPR™ technology. Available on the ZETA^® G3 Spray Cleaning Platform, this innovative technology eliminates the need for ashing on most implanted photoresist stripping processes, including highly doped (1x10¹⁷ ions/cm² ) plasma implanted (PLAD) photoresist. ViPR™ eliminates ashing damage, reduces the cost and increases the productivity of the photoresist removal step. Dr. Charles Lin, FSI Asia director of product management, presented the paper All-Wet Ash-Free PR Strip for 65nm and 45nm Technologies, which describes the ViPR™ technology.

Additionally, Dr. Jeff Butterbaugh, FSI chief technologist and ITRS (International Technology Roadmap of Semiconductors) FEP (front end processing) Committee co-chairman made the keynote presentation.. Jeff spoke on Roadmap and Challenges for Surface Preparation, presenting the argument that, beginning with 90nm, keeping to Moore’s Law requires innovative new materials and structures and that simply reducing dimensions will no longer work.

IC makers and other equipment suppliers made informative presentations as well. The seminar was attended by over 200 engineers, and everyone benefited from the exchange of information on leading-edge technologies. For more information on either of these topics, click here.