| Products | Wafer Size (mm) | Applications | |||||
| FEOL Critical Clean & Etch | FEOL All-Wet Resist Strip & Clean | Silicide Metal Strip | BEOL Strip & Clean | Particle/Defect Removal | Resist Processing | ||
|---|---|---|---|---|---|---|---|
| ORION® Single Wafer Cleaning System |
300 | ||||||
| ANTARES® Single Wafer Cryokinetic System |
200/ 300 |
||||||
| ZETA® Batch Spray System |
200/ 300 |
||||||
| ZETA® Semi-Auto Batch Spray System |
≤200 | ||||||
| MERCURY® Semi-Auto Batch Spray System |
≤200 | ||||||
| MAGELLAN® Batch Immersion System |
200/ 300 |
||||||
| POLARIS® Micro Lithography Cluster |
N/A | ||||||
Applications |
Products |
At the 32 nm technology node and beyond, the most critical front-end-of-line (FEOL) cleans are during ultrashallow junction (USJ) formation, with an International Technology Roadmap for Semiconductors' (ITRS) target of 0.3 Å/clean of silicon loss. Meeting this challenge is most difficult for resist removal following high-dose implants.
