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ZETA™ System ViPR™ process strips highly implanted photoresist without plasma ashing
The high chemical reactivity achieved by the steam injected ViPR™ process allows it to strip photoresist by wet chemical action alone for all but the most extreme implant conditions. ViPR, a sulfuric acid – hydrogen peroxide mixture, eliminates the need for ashing, reducing the stripping sequence from as many as three steps (clean, ash, clean) to one.
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FSI International Announces Expansion of ViPR™ All-Wet Stripping Technology into NAND Memory Manufacturing
All-wet photoresist stripping technology eliminates asher-induced defects.
MINNEAPOLIS (March 24, 2009) — FSI International, Inc. (Nasdaq: FSII) a leading supplier of wafer processing, cleaning and surface conditioning equipment for semiconductor manufacturing, announced today that a major memory manufacturer has extended the use of its ZETA® Cleaning System with proprietary ViPR™ all-wet, ashless cleaning technology to NAND production.
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UMC Validates the ZETA® System ViPR™ Technology for NiPt Silicide Process on Silicon-Germanium (SiGe)
OTS (February 2009) -- At the recent FSI Knowledge Services™ Seminar Series in Asia, UMC presented compelling data using FSI’s ZETA® System ViPR™ process for the removal of unreacted metal in a nickel platinum (NiPt) self aligned silicide process on strained silicon germanium devices. UMC asserted that FSI’s ZETA® System ViPR™ technology is fully compatible with SiGe, and the technology has excellent selectivity and does not attack the low temp annealed silicides like chlorine based solutions. In addition, the ViPR™ technology one step process reduced overall cycle time compared to UMC’s existing double wet step process (Ni strip–anneal–Pt strip).
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IC Industry Moving to Paradigm of High-k/Metal Gates and Shallower Junctions
OTS (February 2009) -- With the recent publication of the 2008 ITRS update, and papers given at the latest IEDM Conference [1-5] it is clear that the broader integrated circuit (IC) industry is boldly moving into the paradigm of high-k/metal gate (HKMG) logic devices. In addition, the ITRS indicates junction depths for source/drain extensions continue to decrease as gate length continues to scale. These two trends drive key surface preparation challenges.
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ZETA® System ViPR™ Photoresist Stripping Process Dramatically Reduces Cycle Time in 200mm Production at MagnaChip Semiconductor
OTS (February 2009) -- At FSI’s recent FSI Knowledge Services™ Seminar held in Asia, representatives of MagnaChip described their experience with the ZETA® System ViPR™ photoresist stripping process in a 200mm production fab, attributing it to reductions in cycle time by as much as 11x over the ash and clean process of record.
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FSI International Announces the ZETA® Spray Cleaning System with ViPR™ Technology is Now Qualified for 200mm Manufacturing
ViPR™ technology eliminates ashing for highly implanted photoresist and improves yields for metal stripping following salicide processes
MINNEAPOLIS (December 9, 2008) — FSI International, Inc. (Nasdaq: FSII), a leading supplier of surface conditioning equipment for microelectronics manufacturing, announced today that its FSI ZETA® spray cleaning system with ViPR™ technology is now available for 200mm wafer processing, and an Asian customer has qualified this technology for their 200mm manufacturing.
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Reclaiming Test Wafers in ZETA® Spray Tool Can Save Millions
OTS (February 2007) -- Internal recycling of test wafers using FSI’s ZETA® spray processor can save millions of dollars compared to the cost of new wafers or externally reclaimed wafers. A high volume production fab may consume 500 to 1000 test wafers every day. With new 300mm wafers costing about $200 each, the cost of test wafers is very significant. 200,000 new wafers per year—548 wafers per day—cost $40 million. Most manufacturers mitigate this cost by recycling wafers, usually through a third party reclaim service. Reclaimed wafers from these services are usually about half the cost of new wafers.
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Controlling Dissolved Oxygen in Cleaning Processes
OTS (September 2008) -- Dissolved gases have long been known to have significant impact on wet cleaning processes. Dissolved oxygen in rinse water contributes to surface oxidation and watermark formation during wafer drying [1-2]. Dissolved gases can affect megasonics processes and are often controlled in order to optimize particle removal efficiency and prevent pattern damage [3]. In addition, dissolved CO2 is well-known to form carbonic acid, affecting the pH of liquid cleaning solutions. More recently, there is an increased concern about the effect of dissolved oxygen when cleaning surfaces with different metals exposed.
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ZETA® System Improves Cobalt Salicide Process Yields for Numonyx
At FSI’s recent Knowledge Services™ Seminar series Enrico Bellandi described the success he and his colleagues at Numonyx had in reducing the defectivity and improving the yield of their cobalt salicide process using the ZETA® spray cleaning system. Reduction of contact and gate conductor resistance through self-aligned silicide formation, also known as “salicide,” is a well-known integrated circuit manufacturing module. A critical step in this module is the selective removal of unreacted metal after the silicide is formed by an annealing step. For flash memory manufacturing it is especially critical to remove any residual metal from the nitride spacer on the side of the gate stack.
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STMicroelectronics Describes ZETA® System ViPR™ Process in Metal Stripping for Nickel Platinum Silicide
OTS (September 2008) -- At the recent FSI Knowledge Services™ Seminar series Stephane Zoll and Bruno Imbert of STMicroelectronics described challenges and solutions of metal stripping for nickel platinum (NiPt) salicide formation using a process based on FSI’s ZETA® System ViPR™ technology. The process leverages the FSI’s proprietary high temperature capabilities to strip unreacted NiPt with a sulfuric acid/hydrogen peroxide chemistry. This process is able to strip the unreacted Ni and residual Pt while avoiding the parasitic oxidation seen when chlorine based chemistries are used on NiPt silicides annealed at low temperatures. By enabling low temperature annealing, the new method solves a critical problem in the integration of NiPt silicides at the 45 nm technology node.
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FSI co-authors paper at the 17th International Conference on Ion Implantation Technology
OTS (September 2008) -- FSI co-authors paper at the 17th International Conference on Ion Implantation Technology (IIT 2008) in Monterey, California, June 8-13, 2008
The International Conference on Ion Implantation Technology is held every two years at different locations around the world. This Conference Series is the premier world meeting for the presentation of the latest advances in all aspects of ion implantation. The Conference consists of invited presentations as well as selected contributed presentations and posters.
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Apprecia Technology, Inc. presents at the Electronic Journal 186th Technical Symposium
OTS (September 2008) -- Apprecia Technology, Inc. presents at the Electronic Journal 186th Technical Symposium - Exhaustive Study for 2008 ULSI Surface Cleaning and Drying Technology - in Tokyo, August 28, 2008
Electronic Journal in Japan sponsors many technical symposia. Each year one of the symposia is focused on cleaning technology in IC manufacturing. In 2008, the focus of this symposium was on cleaning challenges for 45nm and 32nm technology generations.
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Resist Removal Walks a Tightrope
At the 32 nm technology node and beyond, the most critical front-end-of-line (FEOL) cleans are during ultrashallow junction (USJ) formation, with an International Technology Roadmap for Semiconductors' (ITRS) target of 0.3 Å/clean of silicon loss. Meeting this challenge is most difficult for resist removal following high-dose implants.
- Increasing Demands Require New Look at Wafer Cleans
As device structures scale down, it is getting increasingly difficult to achieve low material loss while still removing particles. It is also getting more difficult to keep from damaging, attacking or otherwise modifying surrounding materials and structures — including doped silicon loss, changes in the k values of low-k dielectrics, metal gate corrosion, pattern collapse, and more.
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- FSI Sponsors and Presents at the 2008 9th International Symposium on Ultra Clean Processing of Semiconductor Surfaces
OTS (September 2008) -- The Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) objective is to increase the level of understanding on ultra-clean processing technology in all steps of IC-production.
The conference, which was held September 21-24 in Bruges, Belgium, included invited presentations as well as selected contributing presentations and posters.
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- FSI was a Proud Sponsor of the 5th Semiconductor International China Wafer Cleaning Seminar Held 15 October 2008 in Shanghai
OTS (September 2008) -- The The SI China conference theme was Applications and Challenges in Cleaning Technology at the Age of Deep Submicron and emphasized practical and next-generation technologies, including:
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- ZETA® Spray Cleaning System’s ViPR™ Process for Metal Silicide Stripping Reduces Cost, Increases Throughput and Enables Low Temperature NiPtSi Anneal
OTS (February 2008) -- In parallel to the advancements made in ashless resist stripping using ZETA® system ViPR™ process, FSI now offers the HCl free ViPR™ process for metal silicide stripping (see FSI press release “FSI International Announces Breakthrough in Metal Stripping for Silicide Formation”). In collaboration with several customers, FSI has optimized the ViPR™ baseline process for rapid stripping of cobalt and nickel-platinum alloy metals used for salicide formation.
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- FSI Presents Advanced Cobalt Stripping Process for High Yield Salicide Formation
OTS (July 2006) -- At the conference, Dr. Charles Lin, FSI Asia director of product management, was pleased to present the paper Advanced Cobalt Stripping Process for High Yield Salicide Formation.
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- FSI International’s ZETA® System ViPR™ Process Identified as a Key Technology for Ultra-High Dose Ion Implantation in CMOS Applications
MINNEAPOLIS (June 17, 2008) -- FSI International, Inc. (Nasdaq: FSII) announced today that a paper jointly presented by Hynix Semiconductor, Inc.; Varian Semiconductor Equipment Associates, Inc.; Nanometrics Incorporated and FSI identifies the ZETA® Spray Cleaning System with ViPR™ technology as a key step in the integration of ultra-high dose PLAD (plasma doping) ion implantation. The paper was presented at the 17th International Conference on Ion Implantation Technology held June 8-13, 2008, in Monterey, California. The ViPR process is uniquely-capable of removing photoresist hardened by exposure to high-dose ion bombardment without the surface damage and material loss caused by traditional techniques.
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- FSI International Receives Multiple ZETA® Spray Cleaning System Orders with ViPR™ Technology for Wet Resist Stripping and Metal Film Etching after Salicide Formation
MINNEAPOLIS (April 15, 2008) -- FSI International, Inc. (Nasdaq: FSII), a leading manufacturer of wafer cleaning systems used in the fabrication of integrated circuits, announced today that it has received orders for its ZETA® spray cleaning systems with ViPR™ technology from customers in Korea, Japan and Europe. These purchases are from new users of FSI’s ViPR process and demonstrate the growing adoption of this innovative solution, driven by its ability to address critical advanced IC manufacturing cost and integration concerns during photoresist stripping and salicide formation. The systems are scheduled to ship in the third quarter of fiscal 2008.
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- ZETA® Spray Cleaning System’s ViPR™ Process for Ashless Photoresist Stripping Reduces Material Loss and Chemical Costs While Improving Throughput
OTS (February 2008) -- In the latest generation ZETA® system, the new ViPR™ process now offers two recipe types ViPR™ and ViPR™+. The new ViPR™ technology further improves the established ViPR™ process by optimizing conditions to achieve the highest stripping levels with the lowest possible material loss. This is critical for both Logic and DRAM manufacturers.
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- FSI Presents on the Financial Benefits of All-Wet Photoresist Removal for 200mm in Wuxi, China
OTS (February 2008) -- At the November 2007 China IC Industry Development Conference in Wuxi, China, James Chu, FSI field application engineering manager for SE Asia and Great China presented the “The Financial Benefits of All Wet Photoresist Removal for 200mm.”
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- FSI Presents Papers on Yield Improvement Using Cryogenic Aerosol for BEOL Defect Removal and Wet Resist Strip Capability vs. Implant Energy at ECS
OTS (February 2008) -- FSI presented at the 10th International Symposium on Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing at the October 2007, Electrochemical Society Meeting in Washington, D.C.
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- FSI Presents the Advantages of Batch Spray Processing for Superior All-Wet Photoresist Stripping and Film Removal in China and Korea
OTS (February 2008) -- “Batch Spray processing for Superior Photoresist Stripping and Film Removal process” was presented at the August 2007 SI China Wafer Cleaning Seminar in Shanghai, China, by James Chu, FSI field application engineering manager for SE Asia and Great China; and at the September 2007, 6th Korean Surface Cleaning Users Group meeting in Seoul, Korea, by Andy Lee, FSI spray applications section manager.
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- FSI International Announces Breakthrough in Metal Stripping for Silicide Formation
MINNEAPOLIS (December 11, 2007) -- FSI International, Inc. (Nasdaq: FSII) today announced it has adapted the FSI ViPR™ technology to successfully remove unreacted metal films after salicide formation. By implementing this new process, IC makers can achieve dramatic reductions in chemical usage and capital requirements for cobalt, nickel and nickel platinum silicide integration schemes. FSI ViPR™ technology is available on new FSI ZETA® Spray Cleaning System orders and as an upgrade to more recently installed systems in the field.
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